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| Знайдено в інших БД: | Книжкові видання та компакт-диски (1) | Реферативна база даних (21) |
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Загальна кількість знайдених документів : 22 Представлено документи з 1 до 20 |
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| 1. | 
Rabinovich O. I. Impurity Influence on Nitride LEDs [Електронний ресурс] / O. I. Rabinovich, S. A. Legotin, S. I. Didenko // Журнал нано- та електронної фізики. - 2014. - Т. 6, № 3. - С. 03002-1-03002-2. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2014_6_3_4 Light emitting diodes (LEDs) are widely used nowadays. They are used in major parts of our life. But it is still necessary to improve their characteristics. In this paper the impurity and Indium atoms influence on the LEDs characteristics is investigated by computer simulation. Simulation was carried out in Sim Windows. The program was improved for this purpose by creating new files for AlGaInN heterostructure and devices including more than 25 basic parameters. It was found that characteristics depend on impurity and indium atoms changes a lot. The optimum impurity concentration for doping barriers between quantum wells was achieved. By varying impurity and Indium concentration the distribution in AlGaInN heterostructure LEDs characteristics could be improved. | |||
| 2. |
Orlova M. N. Formation of Polymer Films in Organic Photovoltaic Systems [Електронний ресурс] / M. N. Orlova, L. I. Kolesnikova, I. V. Schemerov, S. I. Didenko // Журнал нано- та електронної фізики. - 2014. - Т. 6, № 3. - С. 03009-1-03009-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2014_6_3_11 The influence of elementary processes on the effectiveness of an organic semiconductor based photovoltaic cell designed for energy conversion is highly dependent on the active polymer layer structure. The most urgent task is, therefore, to develop experimental methods for forming films of organic semiconducting polymers with various structures from thin (monolayer films) a few nanometers thick to multilayer ones up to a few micrometers thick. Research has indicated that the layer morphology of the films obtained (up to 350 nm thick) gives reason to postulate film structure and composition being dependent on the value of relative fluorescence variation under the influence of a superimposed magnetic field. Moreover, the transmittance and absorption spectra of polymer films which in many ways define the architecture of a photovoltaic cell are highly dependent on the concentration of solutions in the 300 - 325 nm wavelength range. | |||
| 3. |
Bazalevsky M. A. Photosensitive AlGaAs / GaAs Structures Grown by Molecular Beam Epitaxy [Електронний ресурс] / M. A. Bazalevsky, G. I. Koltsov, S. I. Didenko, S. Yu. Yurchuk, S. A. Legotin, O. I. Rabinovich, V. N. Murashev, I. P. Kazakov // Журнал нано- та електронної фізики. - 2014. - Т. 6, № 3. - С. 03019-1-03019-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2014_6_3_21 | |||
| 4. |
Legotin S. A. Monolithic Silicon Photodetector-detector of Ionizing Radiation Based on Functional Integrated MOS Structures [Електронний ресурс] / S. A. Legotin, V. N. Murashev, S. I. Didenko, O. I. Rabinovich, D. S. Elnikov, A. A. Krasnov, M. A. Bazalevsky, G. I. Koltsov, K. A. Kuzmina // Журнал нано- та електронної фізики. - 2014. - Т. 6, № 3. - С. 03020-1-03020-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2014_6_3_22 | |||
| 5. |
Murashev V. N. Silicon Photodetectors Matrix Coordinate Bipolar Functionally Integrated Structures [Електронний ресурс] / V. N. Murashev, S. A. Legotin, D. S. El’nikov, S. I. Didenko, O. I. Rabinovich // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 1. - С. 01009-1-01009-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_1_11 In this paper a new approach for solving the detection and coordinate the detection of radiation in the optical range of 0,3 - 1,1 microns, based on the use of so-called bipolar functionally integrated structures (BI-FIS) in pixels photodetector arrays is discussed. Variants of new technical solutions based on photodetectors matrix pixel BI-FIS structures are shown. Their effectiveness and scope are evaluated. | |||
| 6. |
Murashev V. N. Investigation of the Irradiation Influence with High-energy Electrons on the Electrical Parameters of the IGBT-transistors [Електронний ресурс] / V. N. Murashev, M. P. Konovalov, S. A. Legotin, S. I. Didenko, O. I. Rabinovich, A. A. Krasnov, K. A. Кuzmina // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 1. - С. 01011-1-01011-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_1_13 The results of studies of the effectiveness of the radiation method for control the characteristics of the IGBT transistors are shown. Experimental results on the effect of irradiation with high-energy electrons with an energy of 6 MeV for dynamic and static parameters of the IGBT transistors of company International Rectifier IRGB14C40L are discussed. | |||
| 7. |
Orlova M. N. Film Growth Based on an Organic Basis for Photovoltaic p-Cells [Електронний ресурс] / M. N. Orlova, S. I. Didenko, O. I. Rabinovich, V. A. Kolesnikov, A. V. Desyatov, D. S. Saranin // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 1. - С. 01013-1-01013-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_1_15 The main measured parameters characterizing the solar cell are its photocurrent and fluorescence under the influence of electromagnetic radiation of the solar spectrum і derivatives of a number of elementary processes in the cell and determining the complex mechanism of its functioning. The main issue is to determine the allowable concentration of the polymer and the acceptor, allowing to obtain a film having a desired density and at the same time, the thickness, the optimum from the point of view of the diffusion length and the probability of dissociation of the intermediate particles with the formation of free charge carriers. From a comparison of the synthesized samples micrographs it can be concluded that the polymer concentration of 12,5 g/l gives a sufficiently dense and relatively uniform film without substantial amounts of undissolved polymer. | |||
| 8. |
Murashev V. N. Analysis of the p-i-n-structures Electrophysical Characteristics Influence on the Spectral Characteristics Sensitivity [Електронний ресурс] / V. N. Murashev, S. Yu. Yurchuk, S. A. Legotin, V. P. Yaromskiy, Yu. V. Osipov, V. P. Astahov, D. S. El’nikov, S. I. Didenko, O. I. Rabinovich, K. A. Kuz’mina // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 2. - С. 02023-1-02023-5. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_2_25 In this paper the simulation of the silicon p-i-n-photodiodes spectral sensitivity characteristics was carried out. The analysis of the semiconductor material characteristics (the doping level, lifetime, surface recombination velocity), the construction and operation modes on the photosensitive structures characteristics in order to optimize them were investigated. | |||
| 9. |
Yurchuk S. Yu. Simulation the Beta Power Sources Characteristics [Електронний ресурс] / S. Yu. Yurchuk, S. A. Legotin, V. N. Murashev, A. A. Krasnov, Yu. K. Omel’chenko, Yu. V. Osipov, S. I. Didenko, O. I. Rabinovich // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 3. - С. 03014-1-03014-5. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_3_16 In this paper the simulation of silicon beta-stimulated power sources spectral sensitivity characteristics was carried out. It was analyzed the influence of the semiconductor material characteristics (the doping level, lifetime) and power supply design on the photosensitive structures characteristics in order to optimize them. | |||
| 10. |
Krasnov A. A. Optimization of Energy Conversion Efficiency Betavoltaic Element Based on Silicon [Електронний ресурс] / A. A. Krasnov, S. A. Legotin, Yu. K. Omel’chenko, S. I. Didenko, V. N. Murashev, O. I. Rabinovich, S. Yu. Yurchuk, V. P. Yaromsky, A. V. Popkova // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 4. - С. 04004-1-04004-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_4_6 It was developed the technology of manufacturing planar betavoltaic converter based on silicon, providing a higher rate of conversion of ionizing radiation into electrical energy by reducing reverse currents. The active region of silicon p - i - n structure is 1 cm2, which is irradiated by the of radionuclide 63 Ni with the activity 2,7 mCi/cm2. The results of experimental studies of C-V samples are presented. The values of the open-circuit voltage (Voc) 0,111 V are presented and short circuit current density (Jsc) 27 nA/cm2. The maximum density of output power (Pmax) was 1,52 nW/cm2. | |||
| 11. |
Urchuk S. U. The Current-voltage Characteristics Simulation of the Betavoltaic Power Supply [Електронний ресурс] / S. U. Urchuk, A. A. Krasnov, S. A. Legotin, S. I. Didenko, V. N. Murashev, U. C. Omel’chenko, U. V. Osipov, O. I. Rabinovich, A. V. Popkova // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 4. - С. 04005-1-04005-5. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_4_7 In order to optimize betavoltaic power supply it was calculated the current-voltage characteristics when changing the depth of the upper p-layer and at changing doping levels structure areas. It is shown that an increase in the depth reduces the short-circuit current and thus reduces the open circuit voltage. It has been observed that the concentration of the lightly doped region more significantly influence on the current-voltage characteristics than the depth of the p - n-junction. The concentration of the n-region, equal to 1014 cm-3, can be considered as during betavoltaic power supply design. It is shown that, by increasing the power supply activity the conversion efficiency of the structure increases, too. | |||
| 12. |
Rabinovich O. I. Heterostructure Active Area Optimization by Simulation [Електронний ресурс] / O. I. Rabinovich, S. I. Didenko, S. A. Legotin, I. V. Fedorchenko, U. V. Osipov // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 4. - С. 04035-1-04035-3. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_4_37 Changing LED performance characteristics, depending on Indium atoms concentration and at different temperatures were simulated. It was suggested that a LED having p - n junction area S0 can be considered as a sum of "SmallLEDs (SLEDs)" electrically connected in parallel, each SLED has its own In-content and its own p-n junction area S(X). Good correlation in simulation and experimental results has been obtained. It was determined that the best structure for AlGaInN NH is p+GaN/p+Al0,2Ga0,8N/4(n-InxGa1-xN-nGaN)/ n+GaN. The main thing is that in the NH AA there are 4QW-in two central ones there is maximum radiation and two ones at the both ends of active region are іbarriersі which help to concentrate electrons/holes in active region and additionally іprotectі QW from different defects. | |||
| 13. |
Orlova M. N. Heterocyclic Polymers Perspectives in Nanolayers of Donor Acceptor Heterojunction for Organic Photovoltaic Application [Електронний ресурс] / M. N. Orlova, S. I. Didenko, O. I. Rabinovich, D. S. Saranin // Журнал нано- та електронної фізики. - 2015. - Т. 7, № 4. - С. 04085-1-04085-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2015_7_4_87 In this work new polymers for organic photovoltaic that are stable to aggressive external environment influence are discussed. Heterocyclic "ladder" structure polymers poly(perylenebenzimidazole- with oxygen bridge between monomer units) (PPBI-O) and poly(naphthoylene benzimidazole - with oxygen bridge between monomer units) (PNBI-O) were studied as potential alternative to poly-3-methyl hexyl thiophene (P3HT) and fullerene {6, 6}-phenyl-C (61) butyric acid (PCBM). This subject is of current interest for goal of reducing cost and time for organic solar cells, where one of the main problems is still high cost of donor and acceptor synthesis. Solar cells based on new polymers were produced. Even after first device investigations it is detected that he electrical resistivity level and device efficiency is also comparable with the target analogue for comparison P3HT. The possibility of molecular structural design provides a wide field for engineers to generate interest to heterocyclic structures based on die-perylene and naphthoyl, the possible combinations for the superposition of the absorption spectra. From this point of view, the creation of optically active polymers based on polybenzomidazofenantroline (PBF), 1, 4, 5, 8-naphthalene tetracarboxylic and 3, 4, 9, 10-perylenetetracarboxylic acids opens new opportunities in this important field of science and technology. The results are high absorption in visible spectrum and ability of morphology improvement. Advantages in the optical properties PPBI-O and PNBI-O above the target prototype P3HT, namely a peak absorption in the region of 555 nm to 700 nm red edge are detected. | |||
| 14. |
Didenko S. I. AlGaN Heterostructure Optimization for Photodetectors [Електронний ресурс] / S. I. Didenko, О. I. Rabinovich, S. A. Legotin, I. V. Fedorchenko, А. А. Krasnov, Yu. V. Osipov, M. S. Melnik, K. A. Sergeev // Журнал нано- та електронної фізики. - 2016. - Т. 8, № 3. - С. 03036-1-03036-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2016_8_3_38 GaN-based photodetectors are of great interest for applications involving detection and imaging in the UV-visible wavelength range. Most of experimental and theoretical work in this area has been focused so far on Schottky diode and p-i-n structures for solar blind applications. However, it seems that bipolar phototransistors with their additional functionality could also be of potential interest. In this work we present the results of phototransistors parameters simulation using the software - Sim Windows. The structure analyzed consisted, counting from the substrate, of n-AlxGa1-xN collector, p-GaN base and n-AlxGa1-xN emitter. The Al mole fraction in the collector and emitter was varied from x = 0,2 to x = 0,3. The collector and emitter thickness was taken as 0,9 mu m. The doping level in the emitter and collector was varied from 1017 to 1019 cm-3. The p-GaN base thickness was taken as 0,3 mu m, with doping of 1017 - 1018 cm-3. The electron and hole lifetimes in the base were taken as 12 ns. | |||
| 15. |
Orlova M. N. CH3NH3PBI3 IV Output Parameters Degradation Investigation [Електронний ресурс] / M. N. Orlova, S. I. Didenko, D. S. Saranin, O. I. Rabinovich, A. Y. Krukov, A. V. Kolesnikov // Журнал нано- та електронної фізики. - 2016. - Т. 8, № 4(1). - С. 04004-1-04004-4. - Режим доступу: http://nbuv.gov.ua/UJRN/jnef_2016_8_4(1)__6 | |||
| 16. | 
Didenko S. Public administration in the field of coal industry [Електронний ресурс] / S. Didenko, О. Yeshchuk, R. Topolia, L. Rusnak // Науковий вісник Національного гірничого університету. - 2019. - № 2. - С. 124-129. - Режим доступу: http://nbuv.gov.ua/UJRN/Nvngu_2019_2_19 Purpose. To examine the experience of Great Britain in reforming the coal industry, as well as the opportunity to use the British Government's experience in reforming the coal industry in Ukraine. Methodology. The authors used the system and structure, structure and functional, analysis and synthesis, induction and deduction methods, as well as methods of comparison and prediction. Findings. When considering the experience of Great Britain in reforming the coal industry, the authors accentuated: 1) the general characteristics of the industry; 2) the role of public administration in reforming the coal industry; 3) the importance of the coal industry in the British Government's strategy. The general characteristics of the British coal industry showed that the UK economy had completely got rid of coal dependency. The analysis of normative legal documents of the Department for Business, Energy and Industrial Strategy found a complete absence of references to the coal industry as such. Confrontation of Margaret Thatcher's government with the National Union of Mineworkers (NUM) in 1984 - 1985 and subsequent results of this confrontation proved the effectiveness and the dominant role of public administration in reforming the coal industry. In fact, public administration in the UK coal industry was aimed at declining its importance in the economy of the state. In analysing the importance of the coal industry in the strategies of the governments of Ukraine and Great Britain, the authors have found diametrically opposite vision. The Ukrainian government is focused on reforming the coal industry and increasing coal production, whereas the UK government does not even consider the coal industry in its strategy. The UK government builds its economy on low carbon and resource-efficient technologies. Originality. The authors have proved the effectiveness of using the public administration in reforming the coal industry. Practical value. The research does not only prove the power and effectiveness of using the public administration in reforming the coal industry. The authors have showed the difference between the vision of the coal industry prospects in the strategies of the governments of Great Britain and Ukraine, as well as possibilities of using public administration for building economy on low carbon and resource-efficient technologies. | |||
| 17. | 
Halunko V. Private International Space Law. Philosophical and Legal Factors of Approval by the World Community [Електронний ресурс] / V. Halunko, S. Didenko // Philosophy & cosmology. - 2019. - Vol. 22. - С. 16-23. - Режим доступу: http://nbuv.gov.ua/UJRN/philcos_2019_22_4 | |||
| 18. | 
Muraviov K. Liability in International Space Law [Електронний ресурс] / K. Muraviov, S. Didenko, R. Mkrtchian // Advanced space law. - 2019. - Vol. 3. - С. 71-82. - Режим доступу: http://nbuv.gov.ua/UJRN/adspl_2019_3_8 | |||
| 19. | 
Relina L. I. Grain quality of tetraploid wheat Triticum timopheevii (Zhuk.) Zhuk [Електронний ресурс] / L. I. Relina, R. L. Boguslavskyi, L. A. Vecherska, S. Yu. Didenko, O. V. Golik, T. A. Sheliakina, V. V. Pozdniakov // Селекція і насінництво. - 2018. - Вип. 114. - С. 106-119. - Режим доступу: http://nbuv.gov.ua/UJRN/selinas_2018_114_13 | |||
| 20. | 
Didenko S. Banking activity on the market of derivative financial instruments in the context of foreign currency security [Електронний ресурс] / S. Didenko, A. Beregoi // Фінансовий простір. - 2019. - № 4. - С. 59-72. - Режим доступу: http://nbuv.gov.ua/UJRN/Fin_pr_2019_4_6 | |||
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